TLF” Transistor, Low Frequency

  • Insulated Gate Bipolar Transistor (IGBT) technology for high power applications
  • 30 to 1,500 KW at (500 to 50,000 Hz)
Benefits Mechanical Features Electrical Features Options
Power control:
Three phase diode bridge input drives the IGBT (Insulated -Gate Bipolar Transistor) Inverter output
Easy to access components during service (Internal system to be serviced by authorized personnel ONLY) Coil matching network includes isolation transformer, and series or parallel capacitor bank Data acquisition capabilities for production and PM monitoring
Push button and potentiometer control for easy operator interface NEMA-12 Style cabinet Protection features include Over-current protection, Over-voltage protection, Power supply water flow switch, and internal temperature switch. Additional fault connection for increased diagnostics (used defined)
Numeric display of power supply outputvolts, inverter current, output frequency & Kilowatts, and system performance diagnostics
Low frequency operating range
TLF-400 shaded